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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

(7) Meng, F Y a McFelea, H a Datta, R a Chowdhury, U a Werkhoven, C b Arena, C b Mahajan, S c

a Arizona State University (United States)

b Soitec Phoenix Lab (United States)

c University of California Davis (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SHOCKLEY PARTIALS; THREADING DISLOCATION;

GALLIUM NITRIDE; STACKING FAULTS;

WELLS;

EID: 80054984243 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3643001 Document Type: Article

Times cited : (15)

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