The composition dependence of the InxGa1-xN bandgap

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 100-105

  O'Donnell, K P ^a   Fernandez Torrente, I ^a,b   Edwards, P R ^a   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

A1. Band gap; A1. Bowing parameter; B1. InGaN; B1. Nitrides; B2. Semiconducting alloys

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION; ENERGY GAP; EXTRAPOLATION; INDIUM ALLOYS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTOR LASERS;

BAND GAP; BOWING PARAMETERS; INGAN; SEMICONDUCTING ALLOYS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342926154     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.040     Document Type: Conference Paper

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