Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4999-5001

  Yonenaga, I ^a   Ohno, Y ^a   Taishi, T ^a   Tokumoto, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Dislocation mobility; Mechanical stability; Wide band gap semiconductors

Indexed keywords

ALN; COMPRESSIVE DEFORMATIONS; DISLOCATION ACTIVITY; DISLOCATION MOBILITY; DISLOCATION MOTION; ELEVATED TEMPERATURE; II-VI COMPOUNDS; INDENTATION HARDNESS; MECHANICAL STRENGTH; WIDE-BAND-GAP SEMICONDUCTOR; ZNO;

ACTIVATION ENERGY; GALLIUM ALLOYS; GALLIUM NITRIDE; HARDNESS TESTING; MECHANICAL STABILITY; RADIATION DAMAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 74349127290     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.196     Document Type: Article

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