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Physical Review Letters

Volumn 111, Issue 2, 2013, Pages

Mg doping affects dislocation core structures in GaN

(8) Rhode, S K a Horton, M K b Kappers, M J a Zhang, S a Humphreys, C J a Dusane, R O c Sahonta, S L a Moram, M A b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b IMPERIAL COLLEGE LONDON (United Kingdom)

c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; CORE STRUCTURE; DISLOCATION CORE; DISLOCATION CORE STRUCTURE; HIGH DISLOCATION DENSITY; LOCAL STRAINS; LOW-DISLOCATION DENSITY; THREADING DISLOCATION;

SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84880082457 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.111.025502 Document Type: Article

Times cited : (62)

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