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Journal of Crystal Growth

Volumn 231, Issue 4, 2001, Pages 466-473

Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

(6) Cho, Hyung Koun a Lee, Jeong Yong a Kim, Chi Sun b Yang, Gye Mo b Sharma, Nikhil c Humphreys, Colin c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Chonbuk National University (South Korea)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

A1. Defects; A1. Planar defects; A1. Transmission electron microscope; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STACKING FAULTS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035502174 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01522-6 Document Type: Article

Times cited : (65)

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