Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 11, Issue 3-4, 2014, Pages 710-713

  Davies, Matthew J ^a   Massabuau, Fabien C P ^b   Dawson, Philip ^a   Oliver, Rachel A ^b   Kappers, Menno J ^b   Humphreys, Colin J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Indium gallium nitride; InGaN; Prelayer; Quantum wells

Indexed keywords

ABSORPTION SPECTROSCOPY; DEFECTS; QUANTUM EFFICIENCY; X RAY DIFFRACTION;

INDIUM GALLIUM NITRIDE; INGAN; INTERNAL QUANTUM EFFICIENCY; MONOCHROMATIC CATHODOLUMINESCENCE; MULTIPLE QUANTUM-WELL STRUCTURES; PRELAYER; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; X-RAY DIFFRACTION MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84898549704     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300451     Document Type: Article

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