High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3089-3091

  Akasaka, Tetsuya ^a   Gotoh, Hideki ^a   Saito, Tadashi ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); DEGRADATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUENCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS;

BOLTZMANN CONSTANT; CAPPING LAYER; FULL WIDTH AT HALF MAXIMUM (FWHM); MOLAR FRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 8644243112     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804607     Document Type: Article

References (20)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. T. Matsuoka, J. Cryst. Growth 189/190, 19 (1998).
3. M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Hour, N. M. Johnson, and S. Brennan, Appl. Phys. Lett. 72, 1730 (1998).
4. T. Sugawara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai, Jpn. J. Appl. Phys., Part 2 37, L398 (1998).
5. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
6. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 2 32, L8 (1993).
7. K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu, and I. G. Chen, Appl. Phys. Lett. 84, 3307 (2004).
8. Y. Narukawa, Y. Kawakami, S. Fujita, and S. Nakamura, Phys. Rev. B 59, 10283 (1999).
9. S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, Appl. Phys. Lett. 79, 4319 (2001).
10. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, Appl. Phys. Lett. 69, 2837 (1996).
11. E. J. Thrush, M. J. Kappers, P. Dawson, D. Graham, J. S. Barnard, M. E. Vickers, L. Considine, J. T. Mullins, and C. J. Humphreys, Phys. Status Solidi A 192, 354 (2002).
12. S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura, Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, and T. Mukai, J. Vac. Sci. Technol. B 19, 2177 (2001).
13. S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishura, and S. P. DenBaars, Appl. Phys. Lett. 68, 3147 (1996).
14. C.-K. Sun, S. Keller, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, Appl. Phys. Lett. 69, 1936 (1996).
15. T. Akasaka, S. Ando, T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 1414 (2001).
16. Y. Kawaguchi, M. Shimizu, M. Yamaguchi, K. Hiramatsu, N. Sawaki, W. Taki, H. Tsuda, N. Kuwano, K. Oki, T. Zheleva, and R. F. Davis, Proceedings of the Second International Conference on Nitride Semiconductors (Japan Society of Applied Physics, Tokushima, 1997), p. 22.
17. J. Dreybrodt, F. Daiminger, J. P. Reithmaier, and A. Forchel, Phys. Rev. B 51, 4657 (1995).
18. D. S. Jiang, H. Jung, and K. Ploog, J. Appl. Phys. 64, 1371 (1988).
19. H. Kumano, K. Hoshi, S. Tanaka, I. Suemune, X. Q. Shen, P. Riblet, P. Ramvall, and Y. Aoyagi, Appl. Phys. Lett. 75, 2879 (1999).
20. Y. Narukawa, S. Saijou, Y. Kawakami, and S. Fujita, Appl. Phys. Lett. 74, 558 (1999).