Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy

Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

  Kehagias, Th ^a   Dimitrakopulos, G P ^a   Kioseoglou, J ^a   Kirmse, H ^b   Giesen, C ^c   Heuken, M ^c   Georgakilas, A ^d,e   Neumann, W ^b   Karakostas, Th ^a   Komninou, Ph ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b HUMBOLDT UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

^d UNIVERSITY OF CRETE   (Greece)

^e INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ATOMS; INDIUM SEGREGATION; METAL-ORGANIC VAPOR PHASE EPITAXY; MIGRATION PATH; NANOPIPES; SURFACE ATOMS; THREADING DISLOCATION; V-DEFECTS;

ATOMS; CRYSTAL GROWTH; DEFECTS; INDIUM; SURFACE RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 69249168037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204454     Document Type: Article

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