Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Applied Physics Letters

Volumn 101, Issue 21, 2012, Pages

  Massabuau, F C P ^a   Sahonta, S L ^a   Trinh Xuan, L ^a   Rhode, S ^a   Puchtler, T J ^a   Kappers, M J ^a   Humphreys, C J ^a   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; DEFECT MORPHOLOGY; EMISSION CHARACTERIZATION; EMISSION PROPERTIES; INGAN/GAN QUANTUM WELL; RED-SHIFTED; STACKING MISMATCH BOUNDARIES; SUB-SURFACES;

ATOMIC FORCE MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECTS;

EID: 84870031292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768291     Document Type: Article

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