Generation of misfit dislocations in high indium content InGaN layer grown on GaN

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 124-128

  Cho, Hyung Koun ^a   Yang, Gye Mo ^b  

^a Dong A University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

A1. Defects; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; STRAIN;

MISFIT DISLOCATIONS; RESIDUAL STRAINS;

CRYSTAL GROWTH;

EID: 0036074631     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01492-6     Document Type: Article

References (16)