V-shaped defects in InGaN/GaN multiquantum wells

Materials Letters

Volumn 41, Issue 2, 1999, Pages 67-71

  Mahanty, S ^a   Hao, M ^a   Sugahara, T ^a   Fareed, R S Q ^a   Morishima, Y ^a   Naoi, Y ^a   Wang, T ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; MULTIQUANTUM WELLS (MQW); V-SHAPED DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033364030     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(99)00105-6     Document Type: Article

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