Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Lwin, Z Z ^a   Pey, K L ^a,b   Liu, C ^a   Liu, Q ^c   Zhang, Q ^a   Chen, Y N ^a   Singh, P K ^d   Mahapatra, S ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DECAY MECHANISM; CHARGE DIFFUSION; CHARGE LOSS; CHARGE TUNNELING; COMPETING MECHANISMS; DISCHARGING CURRENT; DUAL LAYER; ELEVATED TEMPERATURE; GATE STACKS; IN-DEPTH UNDERSTANDING; KELVIN FORCE MICROSCOPY; LOCALIZED CHARGE; MEMORY APPLICATIONS; METAL NANOCRYSTALS;

CHARGE TRAPPING; NANOCRYSTALS; SILICON COMPOUNDS;

LOGIC GATES;

EID: 82955201541     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664220     Document Type: Article

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