Impact of gate materials on positive charge formation in HfO 2/SiO2 stacks

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Zhao, C Z ^a   Zhang, J F ^a   Zahid, M B ^a   Groeseneken, G ^b,c   Degraeve, R ^b,c   De Gendt, S ^b,c  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DIELECTRIC MATERIALS; HYDROGEN; INTERFACES (MATERIALS); RELIABILITY; SEMICONDUCTOR DEVICES; STRESSES;

GATE DEPLETION; METAL GATES; METAL/DIELECTRIC INTERFACE; POSITIVE GATE BIAS STRESSES;

POLYSILICON;

EID: 33746217379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2220484     Document Type: Article

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