In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Ikarashi, Nobuyuki ^a   Takeda, Hiroshi ^a   Yako, Koichi ^a   Hane, Masami ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL POTENTIAL; CHARGING EFFECT; ELECTROSTATIC POTENTIAL DISTRIBUTION; EXTERNAL ELECTRIC FIELD; GATE ELECTRODES; GATE VOLTAGES; GATE-LENGTH; IN-SITU; IN-SITU OBSERVATIONS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFET); MOSFETS; NUMERICAL DEVICE SIMULATION;

ELECTRON HOLOGRAPHY; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 84859800767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3700723     Document Type: Article

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