Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Padovani, Andrea ^a,b   Larcher, Luca ^a,b   Della Marca, Vincenzo ^a,b   Pavan, Paolo ^a,b   Park, Hokyung ^c   Bersuker, Gennadi ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED CHARGE; BLOCKING LAYERS; ELECTRICAL CHARACTERISTIC; ELECTRON AND HOLE TRAPS; ELECTRON CHARGE; ELECTRON TRAPPING; HOLE TRAPPING; PHYSICAL MODEL; PROGRAM OPERATION; PROGRAM VOLTAGE; PROGRAM/ERASE; THRESHOLD VOLTAGE SHIFTS;

CHARGE TRAPPING; HOLE TRAPS; NITRIDES; POWER QUALITY; SILICON COMPOUNDS; SILICON OXIDES; THRESHOLD VOLTAGE;

COMPUTER SIMULATION;

EID: 79960504778     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3602999     Document Type: Article

References (31)

1. S. Sato and T. Yamaguchi, Solid-State Electron. 17, 367 (1974). 10.1016/0038-1101(74)90128-2
2. M. Specht, H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf, R. J. Luyken, W. Rsner, M. Griev, and L. Risch, Solid-State Electron. 49 (5), 716 (2005). 10.1016/j.sse.2004.09.003 (Pubitemid 40340019)
3. W. H. Lee, T. J. Clemens, R. C. Keller, and L. Manchanda, Dig. Tech. Pap. - Symp. VLSI Technol. 117 (1997).
4. P. Blomme, J. De Vos, A. Akheyar, L. Haspeslagh, J. Van Houdt, and K. De Meyer, in Proceedings of the 21st Nonvolatile Semiconductor Memory Workshop, Monterey, CA, 12-16 February 2006 (IEEE, New York, 2006), p. 52.
5. C. H. Lee, K. I. Choi, M. K. Cho, Y. H. Song, K. C. Park, and K. Kim, Tech. Dig.-Int. Electron Devices Meet. 613 (2003).
6. J. Robertson, Rep. Prog. Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
7. A. Kerber, E. Cartier, R. Degraeve, P. J. Roussel, L. Pantisano, T. Kauerauf, G. Groeseneken, H. E. Maes, and U. Schwalke, IEEE Trans. Electron Devices 50 (5), 1261 (2003). 10.1109/TED.2003.813486
8. M. Toledano-Luque, R. Degraeve, M. B. Zahid, B. Kaczer, J. Kittl, M. Jurczak, G. Groeseneken, and J. Van Houdt, Tech. Dig. - Int. Electron Devices Meet. 749 (2009).
9. X. F. Zheng, W. D. Zhang, B. Govoreanu, D. R. Aguado, J. F. Zhang, and J. Van Houdt, IEEE Trans. Electron Devices 57 (1), 288 (2010). 10.1109/TED.2009.2035193
10. D. Liu and J. Robertson, Microelectron. Eng. 86 (7-9), 1668 (2009). 10.1016/j.mee.2009.03.011
11. T. Melde, M. F. Beug, L. Bach, S. Roedel, C. Ludwig, and T. Mikolaijck, Nitride thickness scaling limitations in TANOS charge trapping devices, in Proceedings of the Non-Volatile Semiconductor Workshop, 2008, and the 2008 International Conference on Memory Technology and Design, 18-22 May 2008 (IEEE, New York, 2008), pp. 130-132.
12. A. Padovani, L. Larcher, D. Heh, and G. Bersuker, IEEE Electron Device Lett. 30 (8), 882 (2009). 10.1109/LED.2009.2024622
13. A. Padovani, L. Larcher, D. Heh, G. Bersuker, V. Della Marca, and P. Pavan, Appl. Phys. Lett. 96 (23), 223505 (2010). 10.1063/1.3446835
14. F. R. Libsch and M. White, Solid-State Electron. 33, 105 (1990). 10.1016/0038-1101(90)90017-9
15. G. Wang and M. H. White, Solid-State Electron. 52 (10), 1491 (2008). 10.1016/j.sse.2008.06.036
16. E. Vianello, F. Driussi, A. Arreghini, P. Palestri, D. Esseni, L. Selmi, N. Akil, M. J. Van Duuren, and D. S. Golubovic, IEEE Trans. Electron Devices 56 (9), 1980 (2009). 10.1109/TED.2009.2026113
17. L. Larcher, A. Padovani, V. Della Marca, P. Pavan, and A. Bertacchini, Dig. Tech. Pap. - Symp. VLSI Technol. 52 (2010).
18. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952). 10.1103/PhysRev.87.835
19. R. N. Hall, Phys. Rev. 87, 387 (1952). 10.1103/PhysRev.87.387
20. P. J. McWhorter, S. L. Miller, and T. A. Dellin, J. Appl. Phys. 68 (4), 1902 (1990). 10.1063/1.346580
21. A. Paul, Ch. Sridhar, S. Gedam, and S. Mahapatra, Tech. Dig.-Int. Electron Devices Meet. 439 (2006).
22. S.-H. Gu, C.-W. Hsu, T. Wang, W.-P. Lu, Y.-H. J. Ku, and C.-Y. Lu, IEEE Trans. Electron Devices 54 (1), 90 (2007). 10.1109/TED.2006.887219 (Pubitemid 46056046)
23. V. V. Afanas'ev and A. Stesmans, J. Appl. Phys. 102, 081301 (2007). 10.1063/1.2799091
24. Y. J. Seo, K. C. Kim, T. G. Kim, Y. M. Sung, H. Y. Cho, M. S. Joo, and S. H. Pyi, Appl. Phys. Lett. 92, 132104 (2008). 10.1063/1.2830000 (Pubitemid 351483645)
25. Y. J. Seo, K. C. Kim, H. D. Kim, T. G. Kim, and H.-M. An, J. Korean Phys. Soc. 53 (6), 3302 (2008). 10.3938/jkps.53.3302
26. R. Degraeve, M. Cho, B. Govoreanu, B. Kaczer, M. B. Zahid, J. Van Houdt, M. Jurczak, and G. Groeseneken, Tech. Dig.-Int. Electron Devices Meet. 775 (2008).
27. M. C. Kim, S. Kim, S.-H. Choi, K. Belay, R. G. Elliman, and S. P. Russo, IEEE Electron Device Lett. 30 (8), 837 (2009). 10.1109/LED.2009.2024440
28. V. A. Gritsenko, S. S. Nekrashevich, V. V. Vasilev, and A. V. Shaposhnikov, Microelectron. Eng. 86, 1866 (2009). 10.1016/j.mee.2009.03.093
29. M. Chang, Y. Ju, J. Lee, S. Jung, H. Choi, M. Jo, S. Jeon, and H. Hwang, Appl. Phys. Lett. 93, 022101 (2008). 10.1063/1.2957668
30. F. Giustino, P. Umari, and A. Pasquariello, Microelectron. Eng. 72 (1-4), 299 (2004). 10.1016/j.mee.2004.01.011
31. L. Vandelli, A. Arreghini, A. Padovani, L. Larcher, G. Van den bosch, V. Della Marca, P. Pavan, M. Jurczak, and J. Van Houdt, IEEE Int. Reliab. Phys. Symp. Proc. 731 (2010).