Determination of piezoelectric fields across inGaN/GaN quantum wells by means of electron holography

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 815-818

  Deguchi, Masashi ^a   Tanaka, Shigeyasu ^a   Tanji, Takayoshi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Electron holography; GaN; InGaN; Piezoelectric field; Quantum well

Indexed keywords

ADJACENT LAYERS; FIELD STRENGTHS; INGAN; INGAN/GAN; INGAN/GAN QUANTUM WELL; OVERLAPPING REGIONS; PHASE CHANGE; PIEZO-ELECTRIC FIELDS; QUANTUM WELL; QUANTUM WELL STRUCTURES;

ELECTRON HOLOGRAPHY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLOGRAMS; PIEZOELECTRICITY; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954621376     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1092-9     Document Type: Article

References (9)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H.Kiyoku,andY.Sugimoto, Jpn.J.Appl. Phys. 35, L217 (1996).
2. I. Akasaki and H. Amano, Jpn. J. Appl. Phys. 36, 5393 (1997).
3. F. Bernardini and V. Fiorentini, Physica Status Solidi B 216, 391 (1999).
4. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).
5. D. Cherns, J. Barnard, and F.A. Ponce, Solid State Commun. 111, 281 (1999).
6. J. Cai and F.A. Ponce, J. Appl. Phys. 91, 9856 (2002).
7. Z.H. Wu, A.M. Fischer, F.A. Ponce, W. Lee, J.H. Ryou, J. Limb, D. Yoo, and R.D. Dupuis, Appl. Phys. Lett. 91, 041915 (2007).
8. H. Okuno, M. Takeguchi, K. Mitsuishi, X.J. Guo, and K. Furuya, J. Electron Microsc. 57, 1 (2008).
9. M.R. McCartney and M. Gajdardziska-Josifovska, Ultramicroscopy 53, 283 (1994).