Memory properties and charge effect study in si nanocrystals by scanning capacitance microscopy and spectroscopy

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Lin, Zhen ^a   Bremond, Georges ^a   Bassani, Franck ^b  

^a UNIVERSITÉ DE LYON   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALS; SCANNING; SILICA; CAPACITANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CAPACITANCE CHANGE; DEWETTING PROCESS; MEMORY PROPERTIES; NANO-METER SCALE; QUANTITATIVE MEASUREMENT; SCANNING CAPACITANCE MICROSCOPY; SHIFT DIRECTIONS; SILICON DIOXIDE LAYERS; CHARGE EFFECT; CHARGE TRAP; DIRECT CURRENT; RETENTION TIME; SI NANOCRYSTAL; TRAPPED CHARGE;

CAPACITANCE; NANOCRYSTALS;

EID: 84255204705     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-163     Document Type: Article

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