Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1647-1656

  Zhao, Ce Z ^a,b   Zhang, Jian F ^a   Chang, Mo Huai ^a   Peaker, A R ^c   Hall, Stephen ^b   Groeseneken, Guido ^d,e   Pantisano, Luigi ^d   De Gendt, Stefan ^d,e   Heyns, Marc ^d,e  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d IMEC   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Degradation; Gate stacks; HfO2 hf silicates; Negative bias temperature instability (NBTI); Positive charges; Traps

Indexed keywords

CHARGING (MATERIALS); CMOS TECHNOLOGIES; DEVICE PERFORMANCES; ELECTRON TRAPPING; PMOSFET'S; POSITIVE CHARGES; SHORT TIME; STRESS-INDUCED; THRESHOLD-VOLTAGE INSTABILITY;

EID: 46649110760     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.925151     Document Type: Article

References (38)

1. G. Groeseneken, L. Pantisano, L.-A. Ragnarsson, R. Degraeve, M. Houssa, T. Kauerauf, P. Roussel, S. De Gendt, and M. Heyns, "Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics," in Proc. 11th Int. Symp. Phys. and Failure Anal. of IC 2004, pp. 147-155.
2. T. P. Ma, H. M. Bu, X. W. Wang, L. Y. Song, W. He, M. Wang, H.-H. Tseng, and P. J. Tobin, "Special reliability features for Hf-based high-κ gate dielectrics," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 36-44, Mar. 2005.
3. H. D. Xiong, D. Heh, M. Gurfinkel, Q. Li, Y. Shapira, C. Richter, G. Bersucker, R. Choi, and J. S. Suehle, "Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements," Microelectron. Eng., vol. 84, no. 9/10, pp. 2230-2234, Sep./Oct. 2007.
4. 2 thickness on charge trapping and mobility," Microelectron. Eng., vol. 80, pp. 218-221, 2005.
5. 2/HfSiO stacks," J. Appl. Phys., vol. 100, no. 9, pp. 093 716-1-093 716-10, Nov. 2006.
6. 2 gate dielectrics," in Proc. 41st Annu. Int. Reliab. Phys. Symp., 2003, pp. 41-45.
7. 2-based hole channel field-effect transistors," Appl. Phys. Lett., vol. 85, no. 11, pp. 2101-2103, Sep. 2004.
8. 2 MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 6, pp. 1517-1524, Jun. 2003.
9. H. R. Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, "Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices," in Proc. 43rd Int. Reliab. Phys. Symp., 2005, pp. 80-83.
10. H. R. Harris, R. Choi, J. H. Sim, C. D. Young, P. Majhi, B. H. Lee, and G. Bersuker, "Electrical observation of deep traps in high-κ/metal gate stack transistors," IEEE Electron Device Lett., vol. 26, no. 11, pp. 839-841, Nov. 2005.
11. 2 stacks," Appl. Phys. Lett., vol. 89, no. 2, p. 023-507, Jul. 2006.
12. 2 stacks," Microelectron. Eng., vol. 80, pp. 366-369, Jun. 2005.
13. 2/HiSiO stacks," IEEE Electron Device Lett., vol. 27, no. 10, pp. 817-820, Oct. 2006.
14. 2 gate dielectrics," in IEDM Tech Dig., 2003, pp. 939-942.
15. 2 at 295 and 77 °K," J. Appl. Phys., vol. 50, no. 10, pp. 6366-6372, Oct. 1979.
16. S. K. Lai and D. R. Young, "Effects of avalanche injection of electrons into silicon dioxide - Generation of fast and slow interface states," J. Appl. Phys., vol. 52, no. 10, pp. 6231-6240, Oct. 1981.
17. D. M. Fleetwood, "Effects of hydrogen transport and reactions on microelectronics radiation response and reliability," Microelectron. Reliab., vol. 42, no. 4/5, pp. 523-541, Apr./May 2002.
18. J. F. Zhang, C. Z. Zhao, A. H. Chen, G. Groeseneken, and R. Degraeve, "Hole-traps in silicon dioxides - Part I: Properties," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1267-1273, Aug. 2004.
19. C. Z. Zhao, J. F. Zhang, G. Groeseneken, and R. Degraeve, "Hole-traps in silicon dioxides - Part II: Generation mechanism," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1274-1280, Aug. 2004.
20. C. Z. Zhao and J. F. Zhang, "Effects of hydrogen on positive charges in gate oxides," J. Appl. Phys., vol. 97, no. 7, pp. 073 703-1-073 703-8, Apr. 2005.
21. J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, "Hole trapping and trap generation in the gate silicon dioxide," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1127-1135, Jun. 2001.
22. J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, "Degradation of oxides and oxynitrides under hot hole stress," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 378-386, Feb. 2000.
23. 2 under Fowler-Nordheim stress," J. Appl. Phys. vol. 71, no. 2, pp. 725-734, Jan. 1992.
24. M. H. Chang and J. F. Zhang, "On positive charge formed under negative bias temperature stress," J. Appl. Phys., vol. 101, no. 2, p. 024 516, Jan.2007.
25. C. Tan, M. Xu, and Y. Wang, "Application of the difference subthreshold swing analysis to study generation interface trap in MOS structures due to Fowler-Nordheim aging," IEEE Electron Device Lett., vol. 15, no. 7, pp. 257-259, Jul. 1994.
26. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil, "On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFETs," in IEDM Tech. Dig., 2004, pp. 109-112.
27. C. Shen, M.-F. Li, C. E. Foo, T. Yang, D. M. Huang, A. Yap, G. S. Samudra, and Y.-C. Yeo, "Characterization and physical origin of fast Vth transient in NBTI of pMOSFETs with SiON dielectric," in IEDM Tech. Dig., 2006, pp. 333-336.
28. K. O. Jeppson and C. M. Svensson, "Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices," J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, May 1977.
29. J. F. Zhang, M. H. Chang, and G. Groeseneken, "Effects of measurement temperature on NBTI" IEEE Electron Device Lett., vol. 28, no. 4, pp. 298-300, Apr. 2007.
30. B. Kaczer, T. Grasser, R. Fernandez, and G. Groeseneken, "Toward understanding the wide distribution of time scales in negative bias temperature instability," ECS Trans. Silicon Nitride, Silicon Dioxide, Emerg. Dielectr, vol. 6, pp. 265-281, 2007.
31. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, and L. Chen, "Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations," Appl. Phys. Lett., vol. 82, no. 12, pp. 1881-1883, Mar. 2003.
32. M. H. Chang, Y. Wang, J. F. Zhang, C. Z. Zhao, W. D. Zhang, and M. Xu, "Contribution of as-grown hole traps to NBTI" ECS Trans. Silicon Nitride, Silicon Dioxide, Emerg. Dielectr, vol. 6, pp. 245-262, 2007.
33. E. P. O'Reilly and J. Robertson, "Theory of defects in vitreous silicon dioxide," Phys. Rev. B, Condens. Matter, vol. 27, no. 6, pp. 3780-3795, Mar. 1983.
34. 2," Phys. Rev. B, Condens. Matter, vol. 35, no. 15, pp. 8223-8230, May 1987.
35. M. H. Chang, J. F. Zhang, and W. D. Zhang, "Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides," IEEE Trans. Electron Devices, vol. 53, no. 6, pp. 1347-1354, Jun. 2006.
36. 2/Si interface on reliability issues - Negative-bias-temperature instability and Fowler-Nordheim-stress degradation," Appl. Phys. Lett., vol. 81, no. 23, pp. 4362-4364, Dec. 2002.
37. 2," Phys. Rev. B, Condens. Matter, vol. 57, no. 16, pp. 10030-10034, Apr. 1998.
38. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, no. 12, pp. 3367-3384, Mar. 1993.