A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part I: Fundamental theory and applications to study of the trapped charge vertical location and capture efficiency of SONOS-type devices

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2218-2228

  Lue, Hang Ting ^a   Du, Pei Ying ^a   Wang, Szu Yu ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a,b   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b Ardentec Corporation   (Taiwan)

Author keywords

Capture efficiency; Gate sensing and channel sensing; GSCS method; Nitride trap vertical location; SONOS

Indexed keywords

ANTENNA LOBES; CHARGE TRAPPING; NONMETALS; SILICON; SILICON CARBIDE;

ANALYSIS METHODS; CAPTURE EFFICIENCY; CHANNEL SENSING; FUNDAMENTAL THEORY; GATE-SENSING AND CHANNEL-SENSING; GSCS METHOD; NITRIDE TRAP VERTICAL LOCATION; SILICON CARBIDE DEVICES; SONOS; TOTAL CHARGE; TRAPPED CHARGES;

TRANSIENT ANALYSIS;

EID: 49249136867     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.925926     Document Type: Article

References (9)

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