SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks

(4) Paskaleva, A a Lemberger, M b Atanassova, E a Bauer, A J b

a INSTITUTE OF SOLID STATE PHYSICS (Bulgaria)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS;

CONDUCTION MECHANISM; ELECTRICAL BEHAVIORS; ELECTRICAL DEGRADATION; ELECTRON TRANSPORT; INDIVIDUAL STRUCTURES; MEASUREMENT CONDITIONS; MULTICOMPONENT MATERIALS; STRESS-INDUCED LEAKAGE CURRENT;

HIGH-K DIELECTRIC;

EID: 79551652690 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3521501 Document Type: Conference Paper

Times cited : (11)

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