Electron-related phenomena at the TaN/Al2 O3 interface

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 637-643

  Rao, Rosario ^a,b   Lorenzi, Paolo ^a,b   Ghidini, Gabriella ^c   Palma, Fabrizio ^a,b   Irrera, Fernanda ^a,b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b Italian University NanoElectronics Team   (Italy)

^c Numonyx   (Italy)

Author keywords

Electron trapping; Interface degradation; Metal high k interface; Pulsed C V technique

Indexed keywords

DISPLACEMENT CURRENTS; ELECTRON TRAPPING; FINITE-ELEMENT; FLAT BAND; INTERFACE DEGRADATION; PULSE FRONT; TIME EVOLUTIONS; TIME-SCALES;

CAPACITANCE; DEGRADATION; ELECTRON TRAPS; SILICON COMPOUNDS;

ELECTRONS;

EID: 77649186886     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2039100     Document Type: Article

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