Charge diffusion in silicon nitrides: Scalability assessment of nitride based flash memory

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Baik, Seung Jae ^a   Lim, Koeng Su ^a   Choi, Wonsup ^b   Yoo, Hyunjun ^b   Shin, Hyunjung ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

charge trap; EFM; flash memory; nitride; scalability

Indexed keywords

CHARGE DIFFUSION; CHARGE TRAP; DISPERSION MANAGEMENT; EFM; ELECTROSTATIC FORCE MICROSCOPY; HIGHER TEMPERATURES; HOLE DIFFUSION; INTERNAL ELECTRIC FIELDS; SILICON OXYNITRIDES; SILICON RICH NITRIDES; VARIABLE TEMPERATURE;

ACTIVATION ENERGY; CHARGE TRAPPING; DIFFUSION; ELECTRIC FIELDS; ELECTRIC FORCE MICROSCOPY; ELECTROSTATIC FORCE; RELIABILITY ANALYSIS; SCALABILITY; SILICON NITRIDE;

FLASH MEMORY;

EID: 79959310057     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784550     Document Type: Conference Paper

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