Conductive atomic force microscopy studies of thin SiO2 layer degradation

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Fiorenza, Patrick ^a,b   Polspoel, Wouter ^a   Vandervorst, Wilfried ^a  

^a IMEC   (Belgium)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DIELECTRIC LOSSES; IMAGE ANALYSIS; STRESS ANALYSIS; ULTRATHIN FILMS;

CONDUCTIVE ATOMIC FORCE MICROSCOPY (CAFM); NANOMETER SCALE; RAMPED VOLTAGE STRESSES;

SILICON COMPOUNDS;

EID: 33744830298     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208370     Document Type: Article

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