Investigation of ultra thin polycrystalline silicon channel for vertical NAND flash

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Kim, Bio ^a   Lim, Seung Hyun ^a   Kim, Dong Woo ^a   Nakanishi, Toshiro ^a   Yang, Sangryol ^a   Ahn, Jae Young ^a   Choi, Hanmei ^a   Hwang, Kihyun ^a   Ko, Yongsun ^a   Kang, Chang Jin ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

grain boundary; thin film transistor; ultra thin polycrystalline silicon; vertical NAND flash

Indexed keywords

CHANNEL THICKNESS; EFFECTIVE MOBILITIES; GRAIN SIZE; NAND FLASH; NAND FLASH MEMORY; ON CURRENTS; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SILICON (POLY-SI); RELIABILITY PROPERTIES; SUBTHRESHOLD; TRANSFER CHARACTERISTICS; ULTRA-THIN;

CHARGE TRANSFER; FLASH MEMORY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION EXCHANGE; POLYSILICON; RELIABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959318485     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784464     Document Type: Conference Paper

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