Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films

Physical Review Letters

Volumn 92, Issue 8, 2004, Pages 876011-876014

  Sune J ^a   Wu, E Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHEMICAL BONDS; DESORPTION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; HEATING; HYDROGEN; MOLECULAR VIBRATIONS; MOS DEVICES; STATISTICAL METHODS; THIN FILMS;

DIELECTRIC BREAKDOWN; HYDROGEN-RELEASE MECHANISMS; VIBRATIONAL HEATING MECHANISMS;

SILICA;

EID: 11144226784     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. M. A. Alam, R. K. Smith, B. E. Weir, and P. J. Silverman, Nature (London) 420, 378 (2002).
2. S. Lombardo, J. H. Stathis, and B. P. Linder, Phys. Rev. Lett. 90, 167601 (2003).
3. D. J. DiMaria, J. Appl. Phys. 86, 2100 (1999).
4. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. Roussel, and H. E. Maes, IEEE Trans. Electron Devices 45, 904 (1998).
5. J. Suñé, IEEE Electron Device Lett. 22, 296 (2001).
6. K. F. Shuegraf and C. Hu, IEEE Trans. Electron Devices 41, 761 (1994).
7. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
8. P. E. Blöchl and J. H. Stathis, Phys. Rev. Lett. 83, 372 (1999).
9. E. Y. Wu and J. Suñé, IEEE Electron Device Lett. 23, 494 (2002).
10. E. M. Vogel, M. D. Edelstein, and J. S. Suehle, J. Appl. Phys. 90, 2338 (2001).
11. T.-C. Shen, C. Wang, G.C. Abeln, J. R. Tucker, J.W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995).
12. Ph. Avouris, R. E. Walkup, A. R. Rossi, T.-C. Shen, G. C. Abeln, J. R. Tucker, and J.W. Lyding, Chem. Phys. Lett. 257, 148 (1996).
13. E. T. Foley, A. F. Kam, J.W. Lyding, and Ph. Avouris, Phys. Rev. Lett. 80, 1336 (1998).
14. K. Stokbro, B.Y.-K. Hu, C. Thirstrup, and X.C. Xie, Phys. Rev. B 58, 8038 (1998).
15. E.Y. Wu, A. Vayshenker, E. Nowak, J. Suñé, R. P. Wollertsen, W. Lai, and D. Harmon, IEEE Trans. Electron Devices 49, 2244 (2002).
16. W. McMahon, A. Haggag, and K. Hess, IEEE Trans. Nanotechnology 2, 33 (2003).
17. K. Hess, I.C. Kizilyalli, and J.W. Lyding, IEEE Trans. Electron Devices 45, 406 (1998).
18. Z. Chen, P. Ong, A. K. Mylin, V. Singh, and S. Chetlur, Appl. Phys. Lett. 81, 3278 (2002).
19. R. E. Walkup, D. M. Newns, and Ph. Avouris, Phys. Rev. B 48, 1858 (1993).
20. B. C. Stipe, M. A. Rezaei, W. Ho, S. Gao, M. Persson, and B. I. Lundqvist, Phys. Rev. Lett. 78, 4410 (1997).
21. G. Lüpke, N. H. Tolk, and L. C. Feldman, J. Appl. Phys. 93, 2317 (2003).
22. G. P. Salam, M. Persson, R. E. Palmer, Phys. Rev. B 49, 10655 (1994).
23. J. Wu, E. Rosenbaum, B. MacDonald, E. Li, J. Tao, B. Tracy, and P. Fang, in Proceedings of the 38th International Reliability Physics Symposium (IEEE, Piscataway, NJ, 2000), p. 27.
24. S.T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, IEEE Trans. Nucl. Sci. 47, 2262 (2000).
25. C. H. Lin, M. H. Lee, and C.W. Liu, Appl. Phys. Lett. 78, 637 (2001).
26. G. Ribes et al. (unpublished).