Radiation effects in flash memories

IEEE Transactions on Nuclear Science

Volumn 60, Issue 3, 2013, Pages 1953-1969

  Gerardin, S ^a   Bagatin, M ^a,b   Paccagnella, A ^a,b   Grurmann, K ^c   Gliem, F ^c   Oldham, T R ^d   Irom, F ^e   Nguyen, D N ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors

Indexed keywords

FLOATING GATES; LATEST DEVELOPMENT; NON-VOLATILE MEMORY; PERIPHERAL CIRCUITRY; SINGLE EVENT; SINGLE EVENT EFFECTS; SINGLE EVENT UPSETS; SOFT ERROR;

DATA STORAGE EQUIPMENT; IONIZING RADIATION;

FLASH MEMORY;

EID: 84879234076     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2013.2254497     Document Type: Article

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