Total ionizing dose effects on flash-based field programmable gate array

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3759-3766

  Wang, J J ^a   Samiee, S ^a   Chen, H S ^a   Huang, C K ^a   Cheung, M ^a   Borillo, J ^a   Sun, S N ^a   Cronquist, B ^a   McCollum, J ^a  

^a Actel Corp   (United States)

Author keywords

Field programmable gate array (FPGA); Floating gate transistor; Ionizing radiation effects; Nonvolatile memory

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ELECTRIC CHARGE; FIELD PROGRAMMABLE GATE ARRAYS; GAMMA RAYS; THRESHOLD VOLTAGE; TRANSISTORS;

FLOATING GATE TRANSISTORS; IONIZING RADIATION EFFECTS; NONVOLATILE MEMORY; SEMICONDUCTOR-NITRIDE-OXIDE-SEMICONDUCTOR (SNOS) DEVICES;

IONIZING RADIATION;

EID: 11044223860     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839255     Document Type: Conference Paper

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