Key contributions to the cross section of NAND flash memories irradiated with heavy ions

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3302-3308

  Bagatin, Marta ^a   Gerardin, Simone ^a,b   Cellere, Giorgio ^a,b   Paccagnella, Alessandro ^a,b   Visconti, Angelo ^c   Beltrami, Silvia ^c   Harboe Sørensen, Reno ^d   Virtanen, Ari ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c Numonyx   (Italy)

^d EUROPEAN SPACE AGENCY   (Netherlands)

^e UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

Flash; NAND; Radiation effects

Indexed keywords

ABERRATIONS; ERRORS; FLASH MEMORY; HEAVY IONS; IONS; IRRADIATION; NAND CIRCUITS; OPTICAL PROPERTIES; RADIATION;

CROSS SECTIONS; EFFECTIVE CROSS SECTIONS; FLASH; FLOATING GATES; HEAVY-ION IRRADIATIONS; NAND; NAND FLASH MEMORIES; OPERATING CONDITIONS; PATTERN DEPENDENCES; PERIPHERAL CIRCUITRIES; PROGRAM OPERATIONS; SINGLE EVENTS;

RADIATION EFFECTS;

EID: 58849095010     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007905     Document Type: Conference Paper

References (25)

1. P. Layton, L. Longden, and E. Patnaude, "Evaluation of reliability and data retention of an irradiated nonvolatile memory," Proc. RADECS, pp. PW8-1-PW8-5.
2. D. N. Nguyen and F. Irom, "Total ionizing dose (TID) tests on nonvolatile memories: Flash and MRAM," in Proc. IEEE Rad. Eff. Data Workshop, 2007, pp. 194-198.
3. H. R. Schwartz, D. K. Nichols, and A. H. Johnston, "Single-event upset in flash memories," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2315-2324, Dec. 1997.
4. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, "Radiation effects on advanced flash memories," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1744-1750, Dec. 1999.
5. D. R. Roth, J. D. Kinninson, B. G. Karlhuff, L. R. Lander, G. S. Bognaski, K. Chao, and G. M. Swift, "SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory," in Proc. IEEE Rad. Eff. Data Workshop, 2000, pp. 96-99.
6. D. Krawzsenek, P. Hsu, H. Anthony, and C. Land, "Single event effects and total ionizing dose results of a low voltage EEPROM," in Proc. IEEE Rad. Eff. Data Workshop, 2000, pp. 64-67.
7. P. Layton, G.Williamson, C. Gilbert, L. Longden, E. Patnaude, and C. Sloan, "Compendia of TID and SEE test results of integrated circuits," in Proc. IEEE Rad. Eff. Data Workshop, 2004, pp. 6-9.
8. D. N. Nguyen and L. F. Scheick, "TID, SEE and radiation induced failures in advanced flash memories," in Proc. IEEE Rad. Eff. Data Workshop, 2003, pp. 18-23.
9. R. Koga, V. Tran, J. Gorge, K. Crawford, S. Crain, and P. Yu, "SEE sensitivities of selected advanced flash and first-in-first-out memories," in Proc. IEEE Rad. Eff. Data Workshop, 2004, pp. 47-53.
10. T. Langley and P. Murray, "SEE and TID test results of 1 Gb flash memory," in Proc. IEEE Rad. Eff. Data Workshop, 2005, pp. 58-61.
11. S. Guertin, D. Nguyen, and J. Patterson, "Microdose induced data loss on floating gate memories," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3518-3524, Dec. 2006.
12. T. Oldham, R. Ladbury, M. Friendlich, H. Kim, M. Berg, T. Irwin, C. Seidleck, and K. LaBel, "SEE and TID characterization of an advanced commercial 2 Gbit NAND flash nonvolatile memory," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3217-3222, Dec. 2006.
13. D. Nguyen, S. Guertin, and J. Patterson, "Radiation tests on 2 Gb NAND flash memories," in Proc. IEEE Rad. Eff. Data Workshop, 2006, pp. 121-125.
14. F. Irom and D. Nguyen, "Single event effect characterization of high density commercial NAND and NOR nonvolatile flash memories," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2547-2553, Dec. 2007.
15. H. Schmidt, D.Walter,M. Brüggerman, F. Gliem, R. Harboe-Sørensen, and A.Virtanen, "Heavy ion SEE studies on 4-GbitNAND-Flash memories," presented at the RADECS, 2007, unpublished.
16. H. Schmidt, D.Walter,M. Brüggerman, F. Gliem, R. Harboe-Sørensen, and P. Roos, "Annealing of static data errors in NAND-Flash memories," presented at the RADECS, 2007, unpublished.
17. M. O'Bryan, C. Poivey, K. LaBel, S. Buchner, R. Ladbury, T. Oldham, J. Howard, A. Sanders, M. Berg, and J. Titus, "Compendium of current single event effects results for candidate spacecraft electronics for NASA," in Proc. IEEE Rad. Eff. Data Workshop, 2007, pp. 153-161.
18. T. Oldham, M. Friendlich, J. Howard, M. Berg, H. Kim, T. Irwin, and K. LaBel, "TID and SEE response of an advanced samsung 4 Gb NAND flash memory," in Proc. IEEE Rad. Eff. Data Workshop, 2007, pp. 221-225.
19. J. Tausch, S. Tyson, and T. Fairbanks, "Multigenerational radiation response trends in SONOS-based NROM flash memories with neutron latch-up mitigation," in Proc. IEEE Rad. Eff. Data Workshop, 2007, pp. 189-193.
20. G. Cellere, P. Pellati, A. Chimenton, A. Modelli, L. Larcher, J. Wyss, and A. Paccagnella, "Radiation effects on floating-gate memory cells," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 2222-2228, Dec. 2001.
21. G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, "Sub-picosecond conduction through thin SiO2 layers triggered by heavy ions," J. Appl. Phys., vol. 99, p. 074101, 2006.
22. F. Faccio and G. Cervelli, "Radiation-induced edge effects in deep submicron CMOS transistors," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2413-2420, Dec. 2005.
23. S. Gerardin, M. Bagatin, A. Cester, A. Paccagnella, and B. Kaczer, "Impact of heavy-ion strikes on minimum-size MOSFETs with ultrathin gate oxide," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3675-3680, Dec. 2006.
24. G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, R. H. Sørensen, and A. Virtanen, "Angular dependence of heavy ion effects in floating gate memory arrays," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2371-2378, Dec. 2007.
25. 2 layers," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2144-2152, Dec. 2005.