A model for TID effects on floating gate memory cells

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3753-3758

  Cellere, Giorgio ^a   Paccagnella, A ^a   Visconti, Angelo ^b   Bonanomi, M ^d   Caprara, Paolo ^b   Lora, S ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CNR   (Italy)

^d NONE

Author keywords

Floating gate (FG) memory arrays; Gamma rays; Irradiation; Single event effects (SEE); Total ionizing dose (TID); X rays

Indexed keywords

DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; DOSIMETRY; GAMMA RAYS; GATES (TRANSISTOR); IRRADIATION; PHOTOEMISSION; X RAYS;

FLOATING GATE (FG) MEMORY ARRAYS; SINGLE EVENT EFFECTS (SEE); TOTAL IONIZING DOSE (TID);

IONIZING RADIATION;

EID: 11044222874     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839243     Document Type: Conference Paper

References (26)

1. P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Flash Memories. Boston, MA: Kluwer, 2000.
2. S. Lai, "Flash memories; Where we were and where we are going," IEDM Tech. Dig., pp. 971-971, 1998.
3. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells - An overview," Proc. IEEE, vol. 85, pp. 1248-1271, Aug. 1997.
4. D. N. Nguyen, C. I. Lee, and A. H. Johnston, "Total ionizing dose effects on Flash memories," in Proc. IEEE Radiation Effect Data Workshop, 1998, pp. 100-103.
5. D. R. Roth, J. D. Kinninson, B. G. Karlhuff, L. R. Lander, G. S. Bognaski, K. Chao, and G. M. Swift, "SEU and TID testing of the samsung 128 mbit and the toshiba 256 mbit Flash memory," in Proc. IEEE Radiation Effect Data Workshop, 2000, pp. 96-99.
6. S. Bertazzoni, G. C. Cardarilli, M. Salmeri, A. Salsano, G. Bacis, C. Golla, M. L. Longo, F. Desideri, D. Di Giovenale, G. C. Grande, S. Sperandei, M. Ricci, and P. G. Picozza, "TID on 16 Mb flash memories in radiation environment," in Proc. RADECS'00 Conf., 2000, pp. 229-232.
7. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, "Radiation effects on advanced Flash memories," IEEE Trans. Nucl. Sci., vol. 46, pp. 1744-1750, Dec. 1999.
8. H. R. Schwartz, D. K. Nichols, and A. H. Johnston, "Single-event upset in Flash memories," IEEE Trans. Nucl. Sci., vol. 44, pp. 2315-2324, Dec. 1997.
9. E. S. Snyder, P. J. McWhirter, T. A. Dellin, and J. D. Sweetman, "Radiation response of floating gate EEPROM memory cells," IEEE Trans. Nucl. Sci., vol. 36, pp. 2131-2139, Dec. 1989.
10. N. S. Saks, M. G. Ancona, and J. A. Modolo, "Radiation effects in MOS capacitors with very thin oxides at 80 K," IEEE Trans. Nucl. Sci., vol. 31, pp. 1249-1255, Dec. 1984.
11. G. Cellere, A. Paccagnella, L. Larcher, A. Chimenton, J. Wyss, A. Candelori, and A. Modelli, "Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation," IEEE Trans. Nuclear Sci., vol. 49, pp. 3051-3058, Dec. 2002.
12. 60Co and 10 keV X-ray damage in MOS devices," IEEE Trans. Nucl. Sc., vol. 33, pp. 131-131, 1986.
13. L. Osanger, "Initial recombination of ions," Phys. Rev., vol. 54, pp. 554-554, 1938.
14. G. A. Ausman, "Field dependence of geminate recombination in a dielectric medium," Harry Diamond Laboratories, Adelphi, Tech. Rep. 2097, 1986.
15. 60Co and 10 keV X-ray response in MOS capacitors," IEEE Trans. Nucl. Sci., vol. 30, pp. 4377-4381, Dec. 1983.
16. 2: Direct measurement of the drift mobility and lifetime," Phys. Rev. Lett., vol. 30, pp. 1333-1333, 1973.
17. 60Co irradiation on Flash arrays," in Proc. RADECS'03 Conf., 2003.
18. N. S. Saks, "Response of MNOS capacitors to ionizing radiation at 80° K," IEEE Trans. Nucl. Sci., pp. 1226-1232, Dec. 1978.
19. V. A. K. Raparla, S. C. Lee, R. D. Scrimpf, D. M. Fleetwood, and K. F. Galloway, "A model of radiation effects on nitride-oxide films for power MOSFET applications," Solid State Electron., vol. 47, pp. 775-783, 2003.
20. 4 in oxide/nitride/oxide for metal/oxide/nitride/oxide/silicon non-volatile memories," Jpn. J. Appl. Phys., vol. 38, pp. 1441-1447, 1999.
21. E. J. Yoffa, "Dynamins of dense laser-induced plasmas," Phys. Rev. B 21, pp. 2415-2425, 1980.
22. R. D. Katznelson and D. Frohman-Bentchkowsky, "An erase mode for FAMOS EPROM devices," IEEE Trans. Electron. Devices, vol. 27, pp. 1744-1752, Sept. 1980.
23. L. Larcher, P. Pavan, S. Pietri, L. Albani, and A. Marmiroli, "A new compact DC model of floating gate memory cells without capacitive coupling coefficients," IEEE Trans. Electron. Devices, vol. 49, pp. 301-307, Feb. 2002.
24. G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, "Ionizing radiation effects on floating gates," Appl. Phys. Lett., vol. 85, no. 3, pp. 485-487, July 2004.
25. R. C. Blish, S. X. Li, and D. Lehtonen, "Filter optimization of X-ray inspection of surface-mounted ICs," in Proc. 40th IEEE Int. Reliability Physics Symp. (IRPS), Dallas, TX, 2002, pp. 377-379.
26. C. Poivey, "Radiation hardness assurance for space systems," in Proc. IEEE NSREC Short Course, 2002.