Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3051-3058

  Cellere, G ^a,b   Paccagnella, A ^a,b   Larcher, L ^c,d   Chimenton, A ^e   Wyss, J ^f   Candelori, A ^b   Modelli, A ^g  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d INFM   (Italy)

^e UNIVERSITY OF FERRARA   (Italy)

^f UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^g STMICROELECTRONICS   (Italy)

Author keywords

Floating gate; Gate leakage; Memory reliability; Single event effects

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CHARGE; ELECTRIC LOSSES; ELECTRON TUNNELING; HEAVY IONS; IRRADIATION; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

ELECTRICAL STRESSES; FLOATING GATES;

GATES (TRANSISTOR);

EID: 0036948062     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805339     Document Type: Conference Paper

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