SEE and TID characterization of an advanced commercial 2Gbit NAND flash nonvolatile memory

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3217-3222

  Oldham, T R ^a,b   Ladbury, R L ^a,c   Friendlich, M ^b,d   Kim, H S ^b,d   Berg, M D ^b,d   Irwin, T L ^b,d   Seidleck, C ^b,d   LaBel, K A ^a,c  

^a IEEE   (United States)

^b QSS GROUP INC   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d Muniz Engineering Inc   (United States)

Author keywords

CMOS; Electronics; Nonvolatile memory; Radiation effects; Single event effects; Total ionizing dose

Indexed keywords

DYNAMIC FAILURE MODE; SINGLE EVENT EFFECTS; TOTAL IONIZING DOSE;

CMOS INTEGRATED CIRCUITS; DOSIMETRY; FLASH MEMORY; LOGIC GATES; NONVOLATILE STORAGE; RADIATION EFFECTS;

NAND CIRCUITS;

EID: 33846269634     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885843     Document Type: Conference Paper

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