Charge removal from FGMOS floating gates

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3016-3021

  McNulty, Peter J ^a   Yow, Sushan ^a   Scheick, Leif Z ^b   Abdel Kader, Wagih G ^c  

^a CLEMSON UNIVERSITY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c SOUTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Dosimetry; FGMOS transistors; Ionizing radiation; Trapped charge

Indexed keywords

ANNEALING; DOSIMETRY; ELECTRIC CHARGE; ELECTRONS; HEAVY IONS; HOLE TRAPS; IONIZING RADIATION; MOS DEVICES; OXIDES; RADIATION EFFECTS;

FLOATING GATES;

GATES (TRANSISTOR);

EID: 0036956330     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805975     Document Type: Conference Paper

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