Total ionizing dose effects in NOR and NAND flash memories

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1066-1070

  Cellere, Giorgio ^a,b   Paccagnella, Alessandro ^a,b   Visconti, Angelo ^a,c   Bonanomi, Mauro ^c   Beltrami, S ^f   Schwank, Jim R ^d   Shaneyfelt, Marty R ^d   Paillet, Philippe ^e  

^a IEEE

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e CEA DIF   (France)

^f NONE

Author keywords

Floating gate memories; Proton irradiation; Total ionizing dose

Indexed keywords

DIELECTRIC MATERIALS; ELECTRONS; FLASH MEMORY; IONIZING RADIATION; PROTON IRRADIATION; PROTONS;

FLOATING GATE (FG) MEMORIES; OXIDE BAND; TOTAL IONIZING DOSE;

NAND CIRCUITS;

EID: 34548065398     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.901199     Document Type: Conference Paper

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