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Volumn 56, Issue 6, 2009, Pages 3210-3217

The role of atomic displacements in ION-induced dielectric breakdown

Author keywords

Density functional theory (DFT); Displacement damage; Local melting; Single event gate rupture

Indexed keywords

ATOMIC DISPLACEMENT; CARRIER PLASMA; DAMAGE MODES; DEFECT ENERGY LEVEL; DEVICE DEGRADATION; DEVICE LIFETIME; DIELECTRIC BREAKDOWNS; DIELECTRIC LAYER; DIELECTRIC RUPTURE; DISPLACEMENT DAMAGES; ELECTRONIC DEVICE; EXPERIMENTAL DATA; INDUCED DEFECTS; ION PATHS; IV CHARACTERISTICS; LOCAL MELTING; MULTISCALES; PERCOLATION THEORY; PHYSICAL EFFECTS; QUANTUM-MECHANICAL CALCULATION; RADIATION-INDUCED; RELIABILITY DEGRADATION; SINGLE-EVENT GATE RUPTURE; SINGLE-EVENTS; SOFT BREAKDOWN; SPATIAL DISTRIBUTION;

EID: 72349100398     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2034157     Document Type: Conference Paper
Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.