Variability in FG memories performance after irradiation

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3349-3355

  Cellere, Giorgio ^a,b   Paccagnella, A ^a,b   Visconti, Angelo ^c   Bonanomi, Mauro ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Floating gate (FG) memories; Radiation induced leakage current (RILC); Single event effects

Indexed keywords

FLOATING GATE (FG); LINEAR ENERGY TRANSFER (LET); SINGLE EVENT EFFECTS; STRESS INDUCED LEAKAGE CURRENT (SILC); TUNNEL OXIDE;

ELECTRON TUNNELING; HEAVY IONS; IRRADIATION; LEAKAGE CURRENTS;

GATES (TRANSISTOR);

EID: 33846283779     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886766     Document Type: Conference Paper

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