TID sensitivity of NAND flash memory building blocks

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1909-1913

  Bagatin, Marta ^a,b   Cellere, Giorgio ^a   Gerardin, Simone ^a,b   Paccagnella, Alessandro ^a,b   Visconti, Angelo ^c   Beltrami, Silvia ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c Numonyx   (Italy)

Author keywords

Flash memories; Total dose effects; X rays

Indexed keywords

BUILDING BLOCKES; CHARGE PUMP; FLOATING GATES; HIGH CAPACITY; NAND FLASH MEMORY; NON-VOLATILE MEMORY TECHNOLOGY; RADIATION-HARSH ENVIRONMENT; TOTAL DOSE EFFECTS; X-RAYS;

FAILURE ANALYSIS; IONIZING RADIATION; NAND CIRCUITS;

FLASH MEMORY;

EID: 69549118769     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2016095     Document Type: Conference Paper

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