Single event effect characterization of high density commercial NAND and NOR nonvolatile flash memories

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2547-2553

  Irom, Farokh ^a   Nguyen, Duc N ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Catastrophic; Destructive; Dielectric gate rupture; Micro dose; Nonvolatile memory

Indexed keywords

DIELECTRIC MATERIALS; HEAVY IONS; LOGIC GATES; NONVOLATILE STORAGE;

DIELECTRIC GATE RUPTURE; NONVOLATILE MEMORY; SINGLE EVENT EFFECT;

FLASH MEMORY;

EID: 37249001855     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909984     Document Type: Conference Paper

References (24)

1. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, "Radiation effects on advanced flash memories," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1744-1750, Dec. 1999.
2. H. R. Schwartz, D. K. Nichols, and A. H. Johnston, "Single-event upset in flash memories," IEEE Trans. Nucl. Sci., vol. 6, pp. 2315-2324, Dec. 1997.
3. R. Koga et al., "SEE sensitivities of selected advanced flash and first-in-first-out memories," in Proc. IEEE Radiation Effects Data Workshop, 2004, pp. 47-52.
4. M. V. O'Bryan et al., "Recent radiation damage and single event effect results for microelectronics," in Proc. IEEE Radiation Effects Data Workshop, 1999, pp. 1-14.
5. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells-An overview," IEEE Trans. Nucl. Sci., vol. 85, no. 8, pp. 1248-1271, Aug. 1997.
6. J. Patterson, S. Guertin, and D. Nguyen, "Evolvable SEE Testing Algorithms and Hardware for High Speed Devices: An Update," JPL, IOM 5140-05-239, Aug. 10, 2005.
7. T. R. Oldham et al., "SEE and TID characterization of an advanced commercial 2 Gbit NAND flash nonvolatile memory," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3217-3222, Dec. 2006.
8. L. Edmonds, private communication, JPL.
9. D. N. Nguyen and J. P. Patterson, "TID and SEE tests of NOR flash memory," in Proc. Radecs Data Workshop, Athens, Greece, 2006.
10. Koga et al., "On the suitability of non-hardened high density SRAMs for space applications," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1507-1513, Dec. 1991.
11. A. Scarpa et al., "Radiation induced leakage current (RILC) in ultrathin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1818-1825, Dec. 1997.
12. L. W. Massengill et al., "Heavy-ion-induced breakdown in ultrathin gate oxides and high-K dielectrics," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1904-1912, Dec. 2001.
13. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture in thin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2345-2352, Dec. 1997.
14. A. H. Johnston, G. M. Swift, T. F. Miyahira, and L. D. Edmonds, "Breakdown of gate oxide during irradiation with heavy ions," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2500-2508, Dec. 1998.
15. J. F. Conley, Jr., J. S. Suehle, A. H. Johnston, B. Wang, T. F. Miyahira, E. M. Vogel, and J. B. Bernstein, "Heavy-ion induced soft breakdown on thin gate oxides," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1913-1916, Dec. 2001.
16. M. Ceschia, A. Paccagnella, M. Turrini, A. Candelori, G. Ghidini, and J. Wys, "Heavy ion irradiation of thin gate oxides," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2648-2655, Dec. 2000.
17. G. M. Swift, D. J. Padgett, and A. H. Johnston, "A new class of single event hard errors," IEEE Trans. Nucl Sci., vol. 41, no. 6, pp. 2043-2048, Dec. 1994.
18. G. Swift, private communication.
19. G. K. Lum et al., "New experimental findings for single-event gate rupture in MOS capacitors and linear devices," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3263-3269, Dec. 2004.
20. C. Dufour, P. Granier, T. Carriere, J. Beaucour, R. Eccofet, and M. Labrunee, "Heavy ion induced single hard errors in submicronic memories," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1693-1697, Dec. 1992.
21. T. R. Oldham, K. W. Bennett, J. Beaucour, T. Caniere, C. Poivey, and P. Garnier, "Total dose failures in advanced electronics from single ions," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1820-1830, Dec. 1993.
22. C. Poivey, T. Carriere, J. Beaucour, and T. R. Oldham, "Characterization of single hard errors (SHE) in 1 M-bit SRAMs from single ions," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2235-2239, Dec. 1994.
23. D. N. Nguyen and F. Irom, "Total Ionize Dose (TID) tests on nonvolatile-memories: Flash and MRAM," in Proc IEEE Radiation Effects Data Workshop, 2007, pp. 194-203.
24. S. M. Guertin, D. N. Nguyen, and J. D. Patterson, "Induced data loss on floating gate memories," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3518-3524, Dec. 2006.