Effect of ion energy on charge loss from floating gate memories

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 2042-2047

  Cellere, Giorgio ^a,b   Paccagnella, Alessandro ^a,b   Visconti, Angelo ^c   Bonanomi, Mauro ^c   Beltrami, Silvia ^c   Harboe Sørensen, Reno ^d   Virtanen, Ari ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d EUROPEAN SPACE AGENCY   (Netherlands)

^e UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

Floating gate memories; High energy particles; Single event upset

Indexed keywords

ELECTROLYSIS;

CHARGE-LOSS; ENERGY IONS; FLOATING GATE MEMORIES; HIGH ENERGIES; HIGH-ENERGY PARTICLES; ION ENERGIES; MEDIUM ENERGIES; ORDERS-OF-MAGNITUDE; SINGLE EVENT UPSET; SPACE ENVIRONMENTS; STATE OF THE ARTS; TESTING PROCEDURES;

IONS;

EID: 53349176926     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000779     Document Type: Conference Paper

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