Measurements of dose with individual FAMOS transistors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1751-1756

  Scheick, L Z ^a   McNulty, P J ^a   Roth, D R ^a   Davis, M G ^a   Mason, B E ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOATING GATE AVALANCHE INJECTION METAL OXIDE SILICON; MICRODOSE DISTRIBUTION; SINGLE EVENT EFFECTS; SINGLE EVENT UPSET; ULTRAVIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY;

ELECTROMAGNETIC WAVE ABSORPTION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); IONIZING RADIATION; PROM; RADIATION EFFECTS; SPACE APPLICATIONS; ULTRAVIOLET DEVICES; ULTRAVIOLET RADIATION;

DOSIMETRY;

EID: 0033346703     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819149     Document Type: Article

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