Modeling single event upsets in floating gate memory cells

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 547-555

  Butt, Nauman Z ^a   Alam, Muhammad ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

FG memory; Scaling; Single event upset; Transient carrier flux

Indexed keywords

CHARGE-LOSS; FG MEMORY; SCALING; SINGLE EVENT UPSET; TRANSIENT CARRIER FLUX;

CIVIL AVIATION; COSMIC RAYS; COSMOLOGY; CYTOLOGY; ELECTRIC NETWORK ANALYSIS; ERROR CORRECTION; IONIZING RADIATION; RELIABILITY; SEMICONDUCTOR STORAGE; STATIC RANDOM ACCESS STORAGE; URANIUM POWDER METALLURGY;

CHARGE CARRIERS;

EID: 51649127546     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558944     Document Type: Conference Paper

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