TID, SEE and radiation induced failures in advanced flash memories

IEEE Radiation Effects Data Workshop

Volumn 2003-January, Issue , 2003, Pages 18-23

  Nguyen, D N ^a   Scheick, L Z ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERRORS; FLASH MEMORY; IRRADIATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADIATION;

FUNCTIONALITY TESTS; MULTILEVELS; POSTIRRADIATION; RADIATION-INDUCED; SINGLE EVENT LATCH-UP;

RADIATION EFFECTS;

EID: 84952789772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2003.1281316     Document Type: Conference Paper

References (6)

1. S. Lai, "Tunnel oxide and ETOX flash scaling limitation",Int'l Non-Volatile Memory Technology Conference, p6.
2. G. Atwood, et al, "Intel StrataFlash memory technology overview," 1998 application note from Intel Corporation
3. R. Koga, S.H. Penzin, K.B. Crawford, and W.R. Crain, "Single event functional interrupt (SEFI) sensitivity in microcircuits," Proceedings of RADECS97, 311-318, 1997.
4. R. Koga, P. Yu, K.B. Crawford, S.H. Crain, and V.T. Tran, "Permanent single event functional interrupt (SEFI) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)," 2001 IEEE Radiation Effects Data Workshop Record, p6.
5. D.N. Nguyen, S.M. Guertin, G.M. Swift, and A.H. Johnston, "Radiation Effects on advanced flash memories," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1744-1750, Dec 1999.
6. D.N. Nguyen, C.I. Lee, and A.H. Johnston, "Total ionizing dose effects on flash memories", 1998 IEEE Radiation Effects Workshop Record, p100.