Single event effects in NAND flash memory arrays

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1813-1818

  Cellere, G ^a,b   Paccagnella, A ^a,b   Visconti, A ^c   Bonanomi, M ^c   Beltrami, S ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Floating gate memories; NAND architecture; RILC; Single event effects

Indexed keywords

FLOATING GATE MEMORIES; NAND ARCHITECTURE; RILC; SINGLE EVENT EFFECTS;

ELECTRIC FIELDS; FLASH MEMORY; IONIZATION; IRRADIATION; OXIDES; THRESHOLD VOLTAGE;

NAND CIRCUITS;

EID: 33748370563     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.880944     Document Type: Conference Paper

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