Transient conductive path induced by a single ion in 10 nm SiO2 layers

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3304-3311

  Gellere, G ^a   Paccagnella, A ^a   Visconti, A ^b   Bonanomi, M ^b   Candelori, A ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONS; ENERGY TRANSFER; HEAVY IONS; MOS CAPACITORS; MOSFET DEVICES; PARAMETER ESTIMATION;

CONDUCTIVE PATH; FLOATING GATE (FG); LINEAR ENERGY TRANSFER (LET); MEMORY ARRAYS;

SILICON COMPOUNDS;

EID: 11044226028     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839146     Document Type: Conference Paper

References (42)

1. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits. New York: Wiley, 1989.
2. J. P. McKelvey, Solid State and Semiconductor Physics. Melbourne, FL: Krieger, 1966.
3. K. G. McKay and K. B. McAfee, "Electron multiplication in silicon and germanium," Phys. Rev., vol. 91, pp. 1079-1084, 1953.
4. C. M. Hsieh, P. C. Murley, and R. R. O'Brien, "A field-funneling effect on the collection of alpha-particle - generated carriers in silicon devices," IEEE Electron. Device Lett., vol. EDL-2, pp. 103-105, Apr. 1981.
5. A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, S. E. Diehl, and J. Hauser, "Charge collection in CMOS/SOS structures," IEEE Trans. Nucl. Sci., vol. NS-32, pp. 4128-4130, Dec. 1985.
6. J. R. Hauser, S. E. Diegl-Nagle, A. R. Knudson, A. B. Campbell, W. J. Stapor, and P. Shapiro, "Ion track shunt effect in multi junction structures," IEEE Trans. Nucl. Sci., vol. 32, pp. 4115-4121, Dec. 1985.
7. A. R. Knudson, A. B. Campbell, J. R. Hauser, M. Jessee, W. J. Stapor, and P. Shapiro, "Charge transport by the ion shunt effect," IEEE Trans. Nucl. Sci., vol. 33, pp. 1560-1564, Dec. 1986.
8. A. O. Brown, B. Bhuva, S. E. Kerns, and W. J. Stapor, "Practical approach to determining charge collected in multi-junction structures due to the ion shunt effect," IEEE Trans. Nucl. Sci., vol. 40, pp. 1918-1925, Dec. 1993.
9. E. J. Yoffa, "Dynamics of dense laser-induced plasmas," Phys. Rev. B, vol. 21, pp. 2415-2425, 1980.
10. 2 films," J. Appl. Phys., vol. 57, p. 2695, 1985.
11. G. Jaffe, "Zur Theorie der Ionization in Kolonnen," Annu. Phys., vol. 42, p. 353, 1913.
12. L. Osanger, "Initial recombination of ions," Phys. Rev., vol. 54, p. 554, 1938.
13. N. S. Saks, M. G. Ancona, and J. A. Modolo, "Radiation effects in MOS capacitors with very thin oxides at 80 K," IEEE Trans. Nucl. Sci., vol. 31, pp. 1249-1255, Dec. 1984.
14. A. Paccagnella and A. Cester, "Radiation response and reliability of oxides used in advanced processes," in Short Course Notebook Nuclear and Space Radiation Effects Conf. (NSREC'03), Monterey, CA, July 2003, pp. III-1-III-106.
15. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, and R. A. Loemker, "Precursor damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2509-2518, Dec. 1998.
16. A. H. Johnston, G. M. Swift, T. Miyahira, and L. D. Edmonds, "Break-down of gate oxides during irradiation with heavy ions," IEEE Trans. Nucl. Sci., vol. 45, pp. 2500-2508, Dec. 1998.
17. N. Boruta, G. K. Lum, H. O'Donnell, L. Robinette, M. R. Shaneyfelt, and J. R. Schwank, "A new physics-based model for understanding single event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1917-1934, Dec. 2001.
18. P. Dodd, M. R. Shaneyfelt, K. M. Horn, D. S. Walsh, G. L. Hash, T. A. Hill, B. L. Draper, J. R. Schwank, F. W. Sexton, and P. S. Wikonur, "SEU-sensitive volumes in bulk and SOI SRAM's from first-principle calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, pp. 1893-1903, Dec. 2001.
19. P. Cappelletti, P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Flash Memories. New York: Kluwer, 2000.
20. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells - an overview," Proc. IEEE, vol. 85, pp. 1248-1271, Aug. 1997.
21. L. Larcher, P. Pavan, F. Gattel, L. Albani, and A. Marmiroli, "A new compact model of a Floating Gate nonvolatile memory cell," in Proc. IEEE ICMSMSSA Conf., 2001.
22. D. N. Nguyen, C. I. Lee, and A. H. Johnston, "Total ionizing dose effects on Flash memories," in Proc. IEEE Radiation Effect Data Workshop, 1998, pp. 100-103.
23. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, "Radiation effects on advanced Flash memories," IEEE Trans. Nucl. Sci., vol. 46, pp. 1744-1750, Dec. 1999.
24. D. Krawzsenek, P. Hsu, H. Anthony, and C. Land, "Single event effects and total ionizing dose results of a low voltage EEPROM," in Proc. IEEE Radiation Effect Data Workshop, 2000, pp. 64-67.
25. D. R. Roth, J. D. Kinninson, B. G. Karlhuff, L. R. Lander, G. S. Bognaski, K. Chao, and G. M. Swift, "SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit Flash memory," in Proc. IEEE Radiation Effect Data Workshop, 2000, pp. 96-99.
26. H. R. Schwartz, D. K. Nichols, and A. H. Johnston, "Single-event upset in Flash memories," IEEE Trans. Nucl. Sci., vol. 44, pp. 2315-2324, Dec. 1997.
27. J. Wyss, D. Bisello, and D. Pantano, "SIRAD: an irradiation facility at the LNL tandem accelerator for radiation damage studies on semiconductors detectors and electronic devices and systems," Nucl. Instrum. Methods Phys. Res., vol. A462, pp. 426-434, 2001.
28. JEDEC Standard JESD89, [Online] Available: http://www.jedec.org, Aug. 2001.
29. B. Eitan, R. Kazerounian, and A. Roy, "Multilevel Flash memories and their trade-offs," in IEDM Tech. Dig., 1996, p. 169.
30. J. M. Benedetto and H. E. Boesch, "The relationship between 60 Co and 10 keV X-ray damage in MOS devices," IEEE Trans. Nucl. Sci., vol. 33, p. 131, 1986.
31. 2: direct measurement of the drift mobility and lifetime," Phys. Rev. Lett., vol. 30, p. 1333, 1973.
32. N. S. Saks, M. G. Ancona, and J. A. Modolo, "Radiation effects in MOS capacitors with very thin oxides at 80 K," IEEE Trans. Nucl. Sci., vol. 31, pp. 1249-1255, Dec. 1984.
33. V. A. K. Raparla, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, and K. F. Galloway, "A model of radiation effects in nitride-oxide films for power MOSFET applications," Solid-State Electron., vol. 47, pp. 775-783, May 2003.
34. G. Gellere, A. Paccagnella, L. Larcher, A. Chimenton, J. Wyss, A. Candelori, and A. Modelli, "Anomalous charge loss from Floating-Gate memory cells due to heavy ions irradiation," IEEE Trans. Nucl. Sci., vol. 49, pp. 3051-3058, Dec. 2002.
35. L. D. Edmonds, "A method for correcting cosine-law errors in SEU test data," IEEE Trans. Nucl. Sci., vol. 49, pp. 1522-1538, June 2002.
36. G. Barbottin and E. Vapaille, Instabilities in Silicon Devices. Amsterdam, The Netherlands: North-Holland, 1989, vol. 2.
37. 2 quartz and the thermal-spike mechanism," Phys. Rev. B, vol. 49, no. 18, pp. 12457-12463, May 1994.
38. M. Toulemonde, C. Dufour, and E. Paumier, "Transient thermal process after a high energy heavy ion irradiation of amorphous metals and semiconductors," Phys. Rev. B, vol. 46, no. 22, pp. 14362-14369, Dec. 1992.
39. L. Larcher, G. Cellere, A. Paccagnella, A. Chimenton, A. Candelori, and A. Modelli, "Data retention after heavy ion exposure of Floating Gate memories: analysis and simulation." IEEE Trans. Nucl. Sci., vol. 50, pp. 2176-2183, Dec. 2003.
40. Nat. Bureau Standards Special Publ., p. 42, May 1981.
41. J. L. Titus, C. F. Wheatley, D. I. Burton, I. Mouret, M. Allenspach, J. Brews, R. Schrimpf, K. Galloway, and R. L. Pease, "Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression," IEEE Trans. Nucl. Sci., vol. 42, pp. 1928-1934, Dec. 1995.
42. J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, G. Vizkelethy, B. L. Draper, T. A. Hill, D. S. Walsh, G. L. Hash, B. L. Doyle, and F. D. McDaniel, "Charge collection in SOI capacitors and circuits and its effect on SEU hardness," IEEE Trans. Nucl. Sci., vol. 49, pp. 2937-2946, Dec. 2002.