Dosimetry based on the erasure of floating gates in the natural radiation environments in space

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2681-2688

  Scheick, L Z ^a   McNulty, P J ^a   Roth, D R ^b  

^a CLEMSON UNIVERSITY   (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); IONIZING RADIATION; MOSFET DEVICES; PROM; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR STORAGE;

FLOATING GATE AVALANCHE INJECTED METAL OXIDE SILICON (FAMOS) DEVICES; ULTRAVIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM);

DOSIMETRY;

EID: 0032319553     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736515     Document Type: Article

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