Catastrophic failure in highly scaled commercial NAND flash memories

IEEE Transactions on Nuclear Science

Volumn 57, Issue 1 PART 2, 2010, Pages 266-271

  Irom, Farokh ^a   Nguyen, Duc N ^a   Bagatin, Marta ^b   Cellere, Giorgio ^b   Gerardin, Simone ^b   Paccagnella, Alessandro ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Catastrophic; Destructive; Dielectric gate rupture; Micro dose; Nonvolatile memory; Single event

Indexed keywords

CATASTROPHIC FAILURES; CATASTROPHIC LOSS; DIELECTRIC GATE RUPTURE; HIGH DENSITY; NAND FLASH MEMORY; NEW HIGH; NON-VOLATILE MEMORIES; SINGLE EVENT; SINGLE EVENT EFFECTS; SINGLE-EVENTS;

FLASH MEMORY;

NAND CIRCUITS;

EID: 77950651913     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2035315     Document Type: Article

References (18)

1. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, "Radiation effects on advanced flash memories," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1744-1750, Dec. 1999.
2. F. Irom and D. N. Nguyen, "Single event effect characterization of high density commercial NAND and NOR nonvolatile flash memories," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2547-2553, Dec. 2007. (Pubitemid 350274118)
3. T. R. Oldham et al., "SEE and TID characterization of an advanced commercial 2 Gbit NAND flash nonvolatile memory," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3217-3222, Dec. 2006.
4. G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, R. H. Sørensen, and A. Virtanen, "Angular dependence of heavy ion effects in floating gate memory arrays," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2371-2378, Dec. 2007. (Pubitemid 350274093)
5. T. R. Oldham, K. W. Bennett, J. Beaucour, T. Carriere, C. Poivey, and P. Garnier, "Total dose failures in advanced electronics from single ions," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1820-1830, Dec. 1993.
6. M. Bagatin et al., "Key contributions to the cross section of NAND flash memories irradiated with heavy ions," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3302-3308, Dec. 2008.
7. [Online]. Available: http://www.jdinstruments.net
8. L. Edmonds, private communication, 2009.
9. F. Gliem, private communication, 2009.
10. T. R. Oldham et al., "TID and SEE response of an advanced Samsung and Micron 4 Gb NAND flash memories for the NASAMMSmission," in Proc. NSREC Data Workshop, Québec City, QC, Canada, 2009.
11. T. R. Oldham et al., "TID and SEE response of an advanced Samsung 4 Gb NAND flash memory," in Proc. NSREC Data Workshop, Honolulu, HI, 2007.
12. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture in thin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2345-2352, Dec. 1997. (Pubitemid 127827202)
13. A. H. Johnston, G. M. Swift, T. F. Miyahira, and L. D. Edmonds, "Breakdown of gate oxide during irradiation with heavy ions," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2500-2508, Dec. 1998. (Pubitemid 128739296)
14. A. Scarpa et al., "Radiation induced leakage current (RILC) in ultrathin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1818-1825, Dec. 1997. (Pubitemid 127827132)
15. L. W. Massengill et al., "Heavy-ion-induced breakdown in ultra-thin gate oxides and high-K dielectrics," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1904-1912, Dec. 2001. (Pubitemid 34199964)
16. M. Ceschia, A. Paccagnella, M. Turrini, A. Candelori, G. Ghidini, and J. Wys, "Heavy ion irradiation of thin gate oxides," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2648-2655, Dec. 2000. (Pubitemid 32321355)
17. G. M. Swift, D. J. Padgett, and A. H. Johnston, "A new class of single event hard errors," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2043-2048, Dec. 1994.
18. G. K. Lum et al., "New experimental findings for single-event gate rupture in MOS capacitors and linear devices," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3263-3269, Dec. 2004.