SEE and TID test results of 1Gb flash memories

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2004, Pages 58-61

  Langley, Tilan E ^a   Murray, Paul ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b SEAKR ENGINEERING INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COSMIC RAYS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IONIZATION; MICROELECTRONICS;

COSMIC RAY EFFECTS ON MICROELECTRONICS (CREME); SINGLE-EVENT LATCHUP (SEL); SINGLE-EVENT UPSET (SEU); TOTAL IONIZING DOSE (TOD);

FLASH MEMORY;

EID: 17644366090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. D. N. Nguyen, L. Z. Scheick, "TID, SEE and Radiation Induced Failures in Advanced Flash Memories," IEEE Radiation Effects Data Workshop, pp. 18-23, 2003.
2. D. R. Roth, J. D. Kinnison, B. G. Carkhuff, J. R. Lander, G. S. Bognaski, K. Chao, G. M. Swift, "SEU and TID Testing of the Samsung 128 Mbit and the Toshiba 256 Mbit Flash Memories," IEEE Radiation Effects Data Workshop, pp. 96-99, 2000.
3. J. Barth, "Modelng Space Radiation Environments," IEEE Nuclear Space Radiation Effects Conference Short Course, Section I pp. 1-83, 1997.