Radiation induced leakage current in floating gate memory cells

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2144-2152

  Cellere, G ^a,b   Larcher, L ^a,c   Paccagnella, A ^a,b   Visconti, A ^d   Bonanomi, M ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

Floating gate memories; Radiation induced leakage current; Single event effects

Indexed keywords

FLOATING GATE MEMORIES; RADIATION INDUCED LEAKAGE CURRENT; SINGLE EVENT EFFECTS; SIO 2;

CAPACITANCE; COMPUTER SIMULATION; IONS; LEAKAGE CURRENTS; RADIATION EFFECTS; SILICA;

DATA STORAGE EQUIPMENT;

EID: 33144481902     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860725     Document Type: Conference Paper

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