Effect of different total ionizing dose sources on charge loss from programmed Floating Gate cells

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2372-2377

  Cellere, G ^a,b   Paccagnella, A ^a,b   Visconti, A ^c   Bonanomi, M ^c   Candelori, A ^d   Lora, S ^e  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d SEZIONE DI PADOVA   (Italy)

^e CNR   (Italy)

Author keywords

rays; Floating gate (FG) memory arrays; Irradiation; Protons; Total ionizing dose (TID); X rays

Indexed keywords

CHARGE LOSS; FLOATING GATE (FG) MEMORY ARRAYS; THRESHOLD VOLTAGE SHIFT; TOTAL IONIZING DOSE (TID);

GAMMA RAYS; IRRADIATION; MOSFET DEVICES; PHOTOEMISSION; THRESHOLD VOLTAGE; X RAY DIFFRACTION; X RAYS;

ARRAYS;

EID: 33144455196     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860681     Document Type: Conference Paper

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