Subpicosecond conduction through thin SiO2 layers triggered by heavy ions

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Cellere, G ^a   Paccagnella, A ^a   Visconti, A ^b   Bonanomi, M ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON BEAMS; GATES (TRANSISTOR);

DENSE PLASMA; FLOATING GATES; GATE MEMORY ARRAYS; THIN SILICON DIOXIDE LAYERS;

SILICA;

EID: 33645940598     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181313     Document Type: Article

References (43)

1. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989).
2. J. P. McKelvey, Solid State and Semiconductor Physics (Krieger, Malabar, FL, 1966).
3. K. G. McKay and K. B. McAfee, Phys. Rev. 91, 1079 (1953).
4. L. Edmonds, IEEE Trans. Nucl. Sci. 45, 3153 (1998).
5. C. M. Hsieh, P. C. Murley, and R. R. O'Brien, IEEE Electron Device Lett. 2, 103 (1981).
6. A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, S. E. Diehl, and J. Hauser, IEEE Trans. Nucl. Sci. 32, 4128 (1985).
7. L. Edmonds, IEEE Trans. Nucl. Sci. 38, 828 (1991).
8. J. R. Hauser, S. E. Diegl-Nagle, A. R. Knudson, A. B. Campbell, W. J. Stapor, and P. Shapiro, IEEE Trans. Nucl. Sci. 32, 4115 (1985).
9. A. R. Knudson, A. B. Campbell, J. R. Hauser, M. Jessee, W. J. Stapor, and P. Shapiro, IEEE Trans. Nucl. Sci. 33, 1560 (1986).
10. A. O. Brown, B. Bhuva, S. E. Kerns, and W. J. Stapor, IEEE Trans. Nucl. Sci. 40, 1918 (1993).
11. R. C. Hughes, Phys. Rev. Lett. 30, 1333 (1973).
12. E. J. Yoffa, Phys. Rev. B 21, 2415 (1980).
13. T. R. Oldham, J. Appl. Phys. 57, 2695 (1985).
14. G. Jaffe, Ann. Physics (Leipzig) 42, 353 (1913).
15. L. Osanger, Phys. Rev. 54, 554 (1938).
16. N. S. Saks, M. G. Ancona, and J. A. Modolo, IEEE Trans. Nucl. Sci. 31, 1249 (1984).
17. S. N. Raskeev, D. M. Fleetwood, R. D. Scrimpf, and T. Pantelides, IEEE Trans. Nucl. Sci. 48, 2086 (2001).
18. A. J. Lelis, H. E. Boesch, T. R. Oldham, and F. B. McLean, IEEE Trans. Nucl. Sci. 35, 1186 (1988).
19. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, IEEE Trans. Nucl. Sci. 36, 1808 (1989).
20. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, and R. A. Loemker, IEEE Trans. Nucl. Sci. 45, 2509 (1998).
21. N. Boruta, G. K. Lum, H. O'Donnell, L. Robinette, M. R. Shaneyfelt, and J. R. Schwank, IEEE Trans. Nucl. Sci. 48, 1917 (2001).
22. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway, J. L. Titus, and C. F. Wheatley, IEEE Trans. Nucl. Sci. 40, 1959 (1993).
23. P. Dodd, IEEE Trans. Nucl. Sci. 48, 1893 (2001).
24. P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Flash Memories (Kluver Academic, Boston, 2000).
25. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, Proc. IEEE 85, 1248 (1997).
26. D. N. Nguyen, C. I. Lee, and A. H. Johnston, Proceedings of the IEEE Radiation Effect Data Workshop, 100 (1998).
27. D. N. Nguyen, S. M. Guertin, G. M. Swift, and A. H. Johnston, IEEE Trans. Nucl. Sci. 46, 1744 (1999).
28. D. Krawzsenek, P. Hsu, H. Anthony, and C. Land, Proceedings of the IEEE Radiation Effect Data Workshop, 64 (2000).
29. D. R. Roth, J. D. Kinninson, B. G. Karlhuff, L. R. Lander, G. S. Bognaski, K. Chao, and G. M. Swift, Proceedings of the IEEE Radiation Effect Data Workshop, 96 (2000).
30. H. R. Schwartz, D. K. Nichols, and A. H. Johnston, IEEE Trans. Nucl. Sci. 44, 2315 (1997).
31. J. Wyss, D. Bisello, and D. Pantano, Nucl. Instrum. Methods Phys. Res. A 462, 426 (2001).
32. B. Eitan, R. Kazerounian, and A. Roy, Tech. Dig. - Int. Electron Devices Meet. 1996, 169.
33. G. Cellere, P. Pellati, A. Chimenton, A. Modelli, L. Larcher, J. Wyss, and A. Paccagnella, IEEE Trans. Nucl. Sci. 48, 2222 (2001).
34. J. M. Benedetto and H. E. Boesch, IEEE Trans. Nucl. Sci. 33, 131 (1986).
35. H. Aozasa, I. Fujiwara, A. Nakamura, and Y. Komatsu, Jpn. J. Appl. Phys., Part 1 38, 1441 (1999).
36. V.A.K Raparla, S. C. Lee, R. D. Scrimpf, D. M. Fleetwood, and K. F. Galloway, Solid State Electronics 47, 775 (2003).
37. D. Ielmini, A. Spinelli, A. Lacaita, and A. Modelli, IEEE Trans. Electron Devices 49, 1955 (2002).
38. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, and G. Ghidini, IEEE Trans. Nucl. Sci. 45, 2375 (1998).
39. L. Larcher, G. Cellere, A. Paccagnella, A. Chimenton, A. Candelori, and A. Modelli, IEEE Trans. Nucl. Sci. 50, 2176 (2003).
40. F. B. McLean and T. R. Oldham, IEEE Trans. Nucl. Sci. 29, 2018 (1982).
41. A. Meftah, Phys. Rev. B 49, 12457 (1994).
42. M. Toulemonde, C. Dufour, and E. Paumier, Phys. Rev. B 46, 14362 (1992).
43. W. R. Thurber, R. L. Mattis, and Y. M. Liu, Semiconductor Measurement Technology, Natl. Bur. Stand. (U.S.) Spec. Publ. No. 400-64 (U.S. GPO, Washington, D.C., 1981).