Angular dependence of heavy ion effects in floating gate memory arrays

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2371-2378

  Cellere, G ^a,b,c   Paccagnella, A ^a,b,c   Visconti, A ^d   Bonanomi, M ^d   Harboe Sorensen R ^a,e   Virtanen, A ^a,f  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

^e EUROPEAN SPACE AGENCY   (Netherlands)

^f UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

Floating gate memories; Multiple bit upset; Single bit upset

Indexed keywords

CHARGE COLLECTION; FLOATING GATE MEMORIES; MULTIPLE BIT UPSET; SINGLE BIT UPSET;

TECHNOLOGY TRANSFER;

HEAVY IONS;

EID: 37249082553     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910036     Document Type: Conference Paper

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